Surface Reaction Modeling in Plasma Deposition/Etching Processing
Da Zhang and Mark J. Kushner
Department of Electrical and Computer Engineering
University of Illinois at Urbana-Champaign
During plasma deposition/etching processing of materials, complex surface reactions happen. Nowadays many researches are focusing on the surface chemical activities to make clear about the reaction mechanisms and thus to achieve better control of the manufacturing. The kinetics of the deposition/etching process is also of great importance due to its commercial meaning and its linkage to product properties like uniformity etc. Here based on most recent experimental results, we developed a surface code that takes in to consideration the reactions at the substrate surface, and calculates feedback of species/fluxes to the discharge. We can also obtain deposition/etching rate vs. surface location information by running the case.
DESCRIPTION OF THE SURFACE CODE
The surface code couples with the modified HPEM code, i.e. the surface subroutines are called during HPEM code iterations. It would be functioning under the manner described below:
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